Senior DRAM RTL design engineer

Our vision is to transform how the world uses information to enrich life for all .
Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.
Key Responsibilities:

• Take responsibility for designing digital IP blocks from initial microarchitecture to RTL creation, integration, and supporting physical hardware development.
• Define and review module interfaces and system-level architecture.
• Actively demonstrate AI-based tools, agentic workflows, and automation frameworks to:
  • Accelerate RTL design optimization and design-space exploration
  • Assist in testbench generation and corner coverage
  • Improve debug efficiency across simulation and silicon learning loops
• Define semicustom methodology for memory design
• Drive full-chip integration including CDC, Lint, synthesis, STA and power analysis.
• Collaborate with CAD, EDA, and software teams to integrate AI-driven flows into simulation, verification, and design sign-off environments.
• Collaborate closely with architecture, design, verification, and physical design / layout teams.
• Oversee and manage the layout process including floor-planning, placement, and routing.
• Perform block-level and full-chip verification including functional, timing, power and reliability analysis using industry standard and Micron-specific simulators and tools.
• Contribute to cross-group communication to work towards standardization and group success
• Provide technical mentorship and participate in design and methodology reviews.
• Drive innovation into the future memory generations and design methodology within a dynamic work environment

Minimum Qualifications

• Master's degree in electrical or computer engineering with 3 - 6 years of experience in RTL design.
• Solid knowledge of asynchronous and synchronous design concepts and CDC methodologies.
• Deep understanding of SoC design flows (Lint, CDC, synthesis, STA, power analysis)
• Fundamentals in CMOS circuit design, device physics and memory operation.
• Ability to work effectively with global multi-functional teams.

Preferred Qualifications

• Domain knowledge in DRAM design (DDR5, LPDDR5 or HBM or in any other memory related field)
• Exposure to or strong interest in AI/ML-assisted design flows, agentic AI or advanced automation in digital design and verification.
• Experience working with Spyglass
• Domain knowledge in NAND memory design
• Experience on SoC / ASIC semicustom flow
• Strong communication, problem-solving and collaboration skills.

About Micron Technology, Inc.
We are an industry leader in innovative memory and storage solutions transforming how the world uses information to enrich life for all . With a relentless focus on our customers, technology leadership, and manufacturing and operational excellence, Micron delivers a rich portfolio of high-performance DRAM, NAND, and NOR memory and storage products through our Micron® and Crucial® brands. Every day, the innovations that our people create fuel the data economy, enabling advances in artificial intelligence and 5G applications that unleash opportunities - from the data center to the intelligent edge and across the client and mobile user experience.
To learn more, please visit micron.com/careers
All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, veteran or disability status.
To request assistance with the application process and/or for reasonable accommodations, please contact [email protected]
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